| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a power consumption is reduced, while maintaining a desired operation speed. SOLUTION: A receiver circuit, which receives a signal transmitted from outside is provided with a CMOS transistor comprising transistors 18 and 19. An N-well 11 and a P-well 12 in the receiver circuit are partitioned with an element isolation insulating film 13. The thickness of a gate oxide film 16 is larger than a gate oxide film 14. The thickness of the gate oxide film 16, for example, is 24-29Åwhile that of the gate oxide film 14 is 20-25Å. The thickness of the gate oxide film 14 is set to such a thickness as a minimum operation speed which is required from the receiver circuit 1 is provided. An electric power is supplied to the receiver circuit even when it is in a wait state. An internal circuit which starts operation with the operation start of the receiver circuit as a trigger is provided. The internal circuit is provided with a CMOS transistor, comprising transistors 28 and 29.
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