发明名称 Device for magnetron sputtering has an outer plasma electrode with a first potential arranged between a target and a counter electrode with a second potential
摘要 Device has an outer plasma electrode (9) with a first potential arranged between a target (1) and a counter electrode (10) with a second potential. An inner plasma electrode (8) with a third potential is arranged in the center of the target within the target region limited by the erosion zone. A screening electrode (11) with a forth potential open to the substrate is arranged on a vacuum flange (6) and surrounds the target, counter electrode, outer plasma electrode and inner plasma electrode. A number of gas outlet openings (12,13) are located on the inner plasma electrode and/or the outer plasma electrode. Plasma screens are located on the inner and/or the outer plasma electrodes to cover the gaps (34,35) to the target.
申请公布号 DE19947932(C1) 申请公布日期 2001.04.26
申请号 DE19991047932 申请日期 1999.09.28
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 FRACH, PETER;GOEDICKE, KLAUS;HOLFELD, ANDREAS;GOTTFRIED, CHRISTIAN;BARTZSCH, HAGEN
分类号 H01J37/34;(IPC1-7):C23C14/35 主分类号 H01J37/34
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