发明名称 |
CMP SLURRY, POLISHING METHOD, AND CMP TOOL |
摘要 |
PROBLEM TO BE SOLVED: To speedily eliminate copper and to minimize the loss of copper in a patterned interconnected body without eliminating a metal layer and a dielectric layer at a lower side or corroding copper. SOLUTION: The chemical - mechanical polishing(CMP) slurry for polishing the layer of copper or that of the alloy of copper contains an etchant, an oxidation suppression agent, and an additive for adjusting the complexing between the copper and the oxidation suppression agent.
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申请公布号 |
JP2001118813(A) |
申请公布日期 |
2001.04.27 |
申请号 |
JP19990300890 |
申请日期 |
1999.10.22 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
BRASTA BRUSICK;EDELSTEIN DANIEL C;PAUL M FENII;WILLIAM GUTHRIE;MARK JASO;FRANK B KAUFFMANN;NAFUTARI RASUTEIGU;PETER LAUPER;RODBELL KENNETH;DAVID B THOMPSON |
分类号 |
H01L21/304;C09K3/14;C09K13/00;C09K13/02;C09K13/04;C09K13/06;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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