| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can easily reduce a parasitic capacity between the base and the collector of a bipolar transistor and can also increase the operating speed of the device. SOLUTION: A P-type epitaxial layer 9 of base is grown on an N-type epitaxial layer 3 of collector. Then, a P-type polycrystalline silicon film 6b is formed on the exposed surface of a P-type polycrystalline silicon film 6a which is a base extraction electrode formed above the P-type epitaxial layer 9. Thereafter, a P-type polycrystalline silicon film 6c is formed in a space between the P-type epitaxial layer 9 and the P-type polycrystalline silicon film 6b to connect the base and the base extraction electrode.
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