| 摘要 |
A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons. The energy band lineups in the disclosed heterostructures achieve emission at wavelengths of 1.3 micron or greater. The W quantum well structure and exemplary materials can be applied to any semiconductor laser including a vertical cavity surface emitting laser (VCSEL) (100). The active region (106) is comprised of one or more sets of triad layers of GaAs1-xNx / GaAs1-ySby / GaAs1-xNx to provide the W quantum well structure. The energy band of these materials provides a staggered band alignment which causes electrons and holes to be confined in adjacent layers to one another. Because the wavefunctions associated with these materials tunnel into adjacent layers, optical emission at a longer wavelength is achievable than otherwise available from the energy gaps of the constituent materials alone.
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