| 摘要 |
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a semiconductor multilayer surface-emitting gain-structure surmounting a Bragg mirror. An external concave mirror and the Bragg mirror define a stable laser-resonator including the gain-structure. A birefringent filter is located in the resonator, inclined at an angle to the resonator axis, for selecting a fundamental frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the laser-resonator between the birefringent filter and the gain-structure and arranged to double the selected frequency of laser radiation. The gain-structure is coated with a dichroic coating which reflects the frequency-doubled radiation and transmits the fundamental radiation and optical pump-light. A surface of the birefringent filter facing the gain-structure includes a dichroic coating which reflects the frequency-doubled radiation and transmits the fundamental radiation. Frequency-doubled radiation generated on both forward and reverse passes of fundamental laser-radiation through the optically-nonlinear crystal is coupled out of the resonator by the dichroic coated birefringent filter.
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