INTEGRATED CIRCUIT WITH AT LEAST ONE CAPACITOR AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to an integrated circuit with at least one capacitor. Both a first capacitor electrode (P1) and at least a part of a second capacitor electrode (P2) of the capacitor are produced by electroplating in depressions (V1, V2) of an auxiliary layer (H). Then the auxiliary layer (H) is removed and is at least partially replaced by a capacitor dielectric (KD). The first capacitor electrode (P1) and the part of the second capacitor electrode (P2) may consist of a metal, for example platinum. The capacitor dielectric (KD) may consist, for example, of BST.