Semiconductor component, e.g. MOSFET comprises a layer of alternating conductivity consisting of vertically extending first zones of a first conductivity and vertically extending second zones of a second conductivity

摘要

Semiconductor component comprises a layer (38) of alternating conductivity consisting of vertically extending first zones (38a) of a first conductivity and vertically extending second zones (38b) of a second conductivity. The first and second zones alternate. Each of the first zones or each of the second zones comprise epitaxial layers (2a-2d) which are layered. Each of the second zones or each of the first zones comprise trenched diffusion zone units (Up, Un) which are vertically arranged over each other and connected to each other. An Independent claim is also included for a process for the production of a semiconductor component.