| 摘要 |
An apparatus includes a coating section for coating a substrate with a resist film and a first film thickness detecting section for detecting the thickness of the resist film coated on the substrate, and sets conditions for exposing the resist film and for developing the exposed resist film according to the detected thickness of the resist film. For example, after a resist film is coated, the thickness of the resist film is detected. Subsequently, from the result of the detection, feedforward control of treatment conditions in an exposure process or a developing process following a resist film coating process is performed. Therefore, the line width of a resist pattern can be precisely controlled.
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