发明名称 |
Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus |
摘要 |
The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate.
|
申请公布号 |
US6222117(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980221870 |
申请日期 |
1998.12.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SHIOZAKI ATSUSHI |
分类号 |
H01L21/00;H01L31/0232;H01L31/0236;H01L31/075;(IPC1-7):H01L31/023 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|