发明名称 |
POLISHING MATERIAL, METHOD FOR POLISHING SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To produce a polishing material that can polish the surface of a substrate such as a silica film without leaving scratches thereon. SOLUTION: Provided are a polishing material prepared by dispersing hollow microparticles or microparticles containing a liquid phase within them in a medium, a method for polishing therewith, and a semiconductor device using a substrate polished therewith. It is preferable that the microparticles have a median particle diameter of 1-500 nm. The microparticles are exemplified by ones made of a substance represented by the formula: SiOx (wherein (x) is 0.9-2.20) and having a bulk density equal to 10-90% of the true density. The medium is exemplified by water optionally containing a dispersant.</p> |
申请公布号 |
JP2001115144(A) |
申请公布日期 |
2001.04.24 |
申请号 |
JP19990293525 |
申请日期 |
1999.10.15 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
MACHII YOICHI;YOSHIDA MASATO;SUSA KENZO |
分类号 |
B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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