发明名称 POLISHING MATERIAL, METHOD FOR POLISHING SUBSTRATE, AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To produce a polishing material that can polish the surface of a substrate such as a silica film without leaving scratches thereon. SOLUTION: Provided are a polishing material prepared by dispersing hollow microparticles or microparticles containing a liquid phase within them in a medium, a method for polishing therewith, and a semiconductor device using a substrate polished therewith. It is preferable that the microparticles have a median particle diameter of 1-500 nm. The microparticles are exemplified by ones made of a substance represented by the formula: SiOx (wherein (x) is 0.9-2.20) and having a bulk density equal to 10-90% of the true density. The medium is exemplified by water optionally containing a dispersant.</p>
申请公布号 JP2001115144(A) 申请公布日期 2001.04.24
申请号 JP19990293525 申请日期 1999.10.15
申请人 HITACHI CHEM CO LTD 发明人 MACHII YOICHI;YOSHIDA MASATO;SUSA KENZO
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 主分类号 B24B37/00
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