发明名称 ORGANIC COPPER COMPOUND FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SOLUTION RAW MATERIAL CONTAINING THE SAME AND USED FOR FORMING THIN COPPER FILM AND THIN COPPER FILM FORMED FROM THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an organic copper compound which is used for metal organic chemical vapor deposition, is scarcely decomposed in a stored state before formed into a film, has a long life, gives an enhanced film-forming speed, can efficiently be decomposed on a substrate, has high evaporability, and has excellent adhesivity to base films. SOLUTION: The solution raw material for forming thin copper films comprises a copper+1(allylalkoxysilane)(hexafluoroacetylacetone) or is obtained by dissolving copper+1(allyltrimethylsilane) (hexafluoroacetylacetone), copper+1(trimethylvinylsilane) (hexafluoroacetylacetone) or copper+1(trimethoxyvinylsilane) (hexafluoroacetylacetone) in the copper+1(allylalkoxysilane) (hexafluoroacetylacetone) as a solvent. At least one of allyltrimethylsilane, trimethylvinylsilane, trimethoxyvinylsilane and allyltrimethoxysilane is preferably further added to the solution.
申请公布号 JP2001114789(A) 申请公布日期 2001.04.24
申请号 JP19990288066 申请日期 1999.10.08
申请人 MITSUBISHI MATERIALS CORP 发明人 SAI ATSUSHI;OGI KATSUMI
分类号 C07F1/08;C07F7/08;C07F7/18;C07F19/00;C23C16/18;H01L21/28;H01L21/285;(IPC1-7):C07F7/18 主分类号 C07F1/08
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