发明名称 |
Method for fabricating semiconductor device having improved step coverage and low resistivity contacts |
摘要 |
A method for fabricating a semiconductor device improves step coverage and resistivity. The method includes the steps of forming a doped silicon layer on a substrate, forming a silicide layer containing more metal atoms than silicon atoms on the doped silicon layer, and heat treating in nitrogen to form a second silicide layer having a tetragonal phase crystal structure and a silicon nitride film on the top surface of the second silicide layer.
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申请公布号 |
US6221762(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19970949399 |
申请日期 |
1997.10.14 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
BYUN JEONG SOO;LEE BYUNG HAK |
分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L29/78;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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