发明名称 |
Method for eliminating stress induced dislocations in CMOS devices |
摘要 |
The stress dislocations formed in a substrate by semiconductor processing are significantly reduced, if not eliminated, by subjecting the substrate to a high temperature post sacrificial oxide anneal that causes viscous flow of the oxide over the substrate. In one example embodiment, a method of forming a semiconductor structure includes forming a first oxide layer over a substrate and forming a first dielectric material layer over the first oxide layer. An opening is then etched in the oxide and dielectric layers thereby exposing the substrate. A trench is formed with a desired depth in the substrate in the opening provided, followed by a deposition of an insulator material in the trench. The first dielectric layer and a portion of the insulator material is then removed leaving a portion of the insulator material within the trench. Applications include logic circuits having embedded-DRAM and circuits directed to stand-alone logic or stand-alone DRAM.
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申请公布号 |
US6221735(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US20000504991 |
申请日期 |
2000.02.15 |
申请人 |
PHILIPS SEMICONDUCTORS, INC. |
发明人 |
MANLEY MARTIN;NOURI FARAN |
分类号 |
H01L21/76;H01L21/762;H01L27/08;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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地址 |
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