发明名称 |
Apparatus and method for oxidizing silicon substrates |
摘要 |
An apparatus and a method for oxidizing silicon substrates by either a wet oxidation or a dry oxidation process in the same oxidation chamber are provided. In the apparatus, an additional conduit is provided for evacuating any residual water vapor trapped in a conduit section between an external torch and the oxidation chamber such that residual water vapor does not flow into the oxidation chamber and cause problems for a dry oxidation process subsequently conducted. The present invention novel apparatus therefore allows thin silicon oxide films such as those used in gate oxides to be formed with high quality in the same oxidation chamber. The present invention novel apparatus further allows high quality tri-layered silicon oxide films to be formed in a dry-wet-dry oxidation process for achieving satisfactory deposition rates and high quality oxide films on the substrate. The present invention novel apparatus and method further allows the same oxidation chamber to be used in a dry oxidation process immediately following a wet oxidation process.
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申请公布号 |
US6221791(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19990324131 |
申请日期 |
1999.06.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
WANG CHIEN-JIUN;HUANG CHING-YU;CHU YU-SEN;LIAO KUO-HUNG |
分类号 |
H01L21/316;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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