发明名称 |
Process for fabricating short channel field effect transistor with a highly conductive gate |
摘要 |
Semiconductor devices are fabricated by providing a substrate; forming isolation regions in the substrate; forming a first insulating layer on the isolation regions and the substrate; forming a conductive-forming layer on the first insulating layer; forming a second insulating layer on the conductive layer; forming a resist layer on the second insulating layer; forming an opening through the resist down to the second insulating layer located vertically between the isolation region; removing the second insulating layer beneath the opening down to the conductive-forming layer; depositing a conductive material through the opening over the conductive layer; planarizing the second insulating layer and the conductive material; removing the second insulating layer, the conductive-forming layer and the first insulating layer except beneath the conductive material; and forming source/drain regions in the substrate; or by providing a substrate; forming isolation regions in the substrate; forming a first insulating layer on the isolation regions and the substrate; forming a first conductive-forming layer on the first insulating layer; forming a second conductive layer on the first conductive-forming layer; forming a second insulating layer on the second conductive layer; forming a resist layer on the second insulating layer; forming an opening through the resist down to the second insulating layer located vertically between the isolation region; removing the second insulating layer beneath the opening down to the second conductive layer; depositing a third insulating material through the opening over the conductive layer; planarizing the second insulating layer and the third insulating material; removing the second insulating layer, the first conductive-forming layer and second conductive layer and the first insulating layer except beneath the third insulating material; and forming source/drain regions in the substrate.
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申请公布号 |
US6221704(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980089650 |
申请日期 |
1998.06.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;NAKOS JAMES S.;RABIDOUX PAUL A. |
分类号 |
H01L21/28;H01L21/336;H01L21/60;H01L21/8238;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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