| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an abrasive for a barrier film which can polish a barrier film at a polishing speed equal to or higher than that in the case of polishing a metal film, can polish a metal film and an insulation film at about the same speed, and can finish the surface of a semiconductor substrate flatly. SOLUTION: This abrasive, for polishing a barrier film and a metal film simultaneously, comprises silica particles and water and has a pH adjusted to in the range of 8.5-10.5.</p> |
