发明名称 |
Method for fabricating a transistor having a variable threshold voltage |
摘要 |
A method for fabricating a transistor having a variable threshold voltage is disclosed. Energy levels of a transistor can be represented by a valance band, a conduction band, and a Fermi level. In order to fabricate a transistor with a variable threshold voltage, a region of the transistor is initially doped with a first dopant having a first energy level below the Fermi level. The region of the transistor is subsequently doped with a second dopant having a second energy level above the Fermi level. Alternatively, the region of the transistor can be initially doped with a first dopant having a first energy level above the Fermi level, and then the region of the transistor can be subsequently doped with a second dopant having a second energy level below the Fermi level.
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申请公布号 |
US6221707(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19990282271 |
申请日期 |
1999.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GHOSHAL UTTAM SHYAMALINDU |
分类号 |
H01L27/092;H01L21/8238;H01L29/10;H01L29/167;H01L29/786;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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