发明名称 |
Film formation method and manufacturing method of semiconductor device |
摘要 |
Disclosed is a film formation method of an interlayer insulating film which is flattened to cover a wiring layer of a semiconductor integrated circuit device, in which a film-forming gas is activated by converting the film-forming gas into a plasma, the film-forming gas being composed of either a mixed gas containing a phosphorus-containing compound containing trivalent phosphorus, which takes a Si-O-P structure, and a silicon-containing compound containing at most one oxygen atom or an additional mixed gas prepared by adding an oxidative gas to said mixed gas; and a silicon-containing insulating film containing P2O5 is formed on a substrate.
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申请公布号 |
US6221755(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19990358399 |
申请日期 |
1999.07.22 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
TOKUMASU NOBORU;MAEDA KAZUO |
分类号 |
H01L21/31;C23C16/40;H01L21/316;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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