发明名称 |
Nonvolatile semiconductor memory and read method |
摘要 |
In a nonvolatile semiconductor memory in which multiple-value information is stored in one memory cell by setting a plurality of threshold values, data is successively read from word lines while continuously changing the word-line read level from a lowest level to a highest level, and the next bit line is selectively precharged in accordance with the data stored in latch means for storing read data.
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申请公布号 |
US6222763(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US20000497212 |
申请日期 |
2000.02.03 |
申请人 |
HITACHI, LTD.;HITACHI ULSI ENGINEERING CORP.;HITACHI DEVICE ENGINEERING CO., LTD. |
发明人 |
SATO HIROSHI;KUBONO SHOJI;HARADA TOSHINORI;KAWAHARA TAKAYUKI;MIYAMOTO NAOKI |
分类号 |
G11C11/56;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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