发明名称 |
Extended trench for preventing interaction between components of stacked capacitors |
摘要 |
A stacked capacitor, in accordance with the present invention includes a conductive plug disposed within a trench for connecting to an access device. A barrier is formed on the plug and is disposed within the trench. A dielectric layer is formed over the trench, the dielectric layer forming a hole therethrough exposing at least a portion of the barrier. A first electrode is formed within the hole and extends from the hole. A capacitor dielectric layer is formed on the first electrode and separating the first electrode from a second electrode, and the dielectric layer and the first electrode substantially prevent chemical interactions between materials of the barrier and materials of the capacitor dielectric layer and an oxidizing environment used to form the capacitor dielectric layer. A method of fabrication is also included.
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申请公布号 |
US6222220(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980209198 |
申请日期 |
1998.12.10 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LIN CHENTING;KNORR ANDREAS |
分类号 |
H01G4/33;H01L21/8242;H01L27/108;(IPC1-7):H01L31/119 |
主分类号 |
H01G4/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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