发明名称 |
Crown capacitor using a tapered etch of a damascene lower electrode |
摘要 |
A structure and process for fabricating a crown capacitor using a tapered etch and chemical mechanical polishing to form a bottom electrode having an increased area and crown is provided. The tapered etch is used to form a trough in an interlevel dielectric, e.g. SiO2, and is performed over contact hole forming a crown-like structure. The trough and, optionally, the crown are then covered by a conductor, which is patterned by chemical mechanical polishing.
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申请公布号 |
US6222219(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980183416 |
申请日期 |
1998.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;KOTECKI DAVID E. |
分类号 |
H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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