发明名称 |
Laser diode of the type having a buried heterostructure |
摘要 |
In a semiconductor laser of the BH-type comprising a lateral current blocking structure which is constituted of an n-p-n-p- or n-SI-n-p-sequence of layers, located on both sides of a buried active region, one or more thin layers are inserted between the second n-doped layer and the second p-doped layer. The thin, extra layers are p-doped and consist of alternatingly materials having a high bandgap and a low bandgap. These thin layers provide a larger forward voltage drop at moderate to high current densities and thereby give a better current confinement in the laser, what in turn gives a higher optical output power and a smaller deviation of the output power/current characteristic thereof from a linear behavior.
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申请公布号 |
US6222865(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980108971 |
申请日期 |
1998.07.02 |
申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) |
发明人 |
STOLTZ BJOERN;SAHLéN OLOF;öHLANDER ULF |
分类号 |
H01S5/22;H01S5/227;H01S5/323;(IPC1-7):H01S5/223 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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