发明名称 |
Complementary heterostructure integrated single metal transistor apparatus |
摘要 |
An enhancement mode periodic table group III-IV semiconductor field-effect transistor complementary pair device is disclosed. The disclosed complementary pair include single metallization for ohmic and Schottky barrier contacts, a permanent non photosensitive passivation layer (a layer which has also been used for masking purposes during fabrication of the device) and gate elements of small dimension and shaped cross section to provide desirable microwave spectrum electrical characteristics. The complementary pair of the invention is fabricated from undoped semiconductor materials disposed in a layered wafer structure and selectively doped by ion implantation to achieve both the p-channel and n-channel transistors. The semiconductor materials may include two, one or zero buffer layers in their layer structure. The disclosed complementary pair is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.
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申请公布号 |
US6222210(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980059869 |
申请日期 |
1998.04.14 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
CERNY CHARLES L. A.;BOZADA CHRISTOPHER A.;DESALVO GREGORY C.;EBEL JOHN L.;DETTMER ROSS W.;GILLESPIE JAMES K.;HAVASY CHARLES K.;JENKINS THOMAS J.;NAKANO KENICHI;PETTIFORD CARL I.;QUACH TONY K.;SEWELL JAMES S.;VIA G. DAVID |
分类号 |
H01L21/8252;H01L27/06;H01L29/812;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/8252 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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