发明名称 |
Optical semiconductor device having waveguide layers buried in an InP current blocking layer |
摘要 |
An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer. After an InGaAsP layer has been formed on an InP substrate, a waveguide including a multiple quantum well active layer is formed by selective MOVPE. Then, the waveguide is buried in an InP current blocking layer. In this configuration, the current blocking layer exhibits its expected function without regard to the width of SiO2 stripes used for selective metalorganic vapor phase epitaxial growth (MOVPE). The laser is feasible for high output operation and can be produced at a high yield.
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申请公布号 |
US6222867(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980080516 |
申请日期 |
1998.05.18 |
申请人 |
NEC CORPORATION |
发明人 |
INOMOTO YASUMASA;SAKATA YASUTAKA |
分类号 |
G02F1/025;H01S3/10;H01S5/00;H01S5/026;H01S5/20;H01S5/22;H01S5/227;H01S5/343;(IPC1-7):H01S5/00;H01S3/08 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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