| 摘要 |
An electrostatic discharge (ESD) protection circuit (20) includes an active load circuit (22) connected to a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor (21) having a Lightly Doped Drain (LDD). The active load circuit includes a current limiting circuit (26) and a load transistor (27). The ESD protection circuit (20) operates to protect a power transistor (16) from damage due to an electrostatic charge. During an ESD event, the LDMOS transistor (21) enters avalanche breakdown after the voltage of the electrostatic charge exceeds the breakdown voltage of the LDMOS transistor (21). The ESD protection circuit (20) provides a low resistance path during an ESD event to dissipate the electrostatic charge.
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