Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby

摘要

A silicon wafer is disposed in an inert gas atmosphere, and the temperature thereof is raised, and dichlorosilane is introduced to cause a surface reaction of the silicon wafer to occur, and then dichlorosilane to which WF6 is added is introduced so as to deposit tungsten silicide thinly on the above-mentioned silicon wafer. Next, the WF6 is stopped and the dichlorosilane is introduced, and after that, dichlorosilane to which WF6 is added is introduced so as to deposit the tungsten silicide, thus forming a tungsten silicide film.