发明名称 NON-PLANAR, FERROMAGNETIC SPUTTERING TARGET WITH LOW MAGNETIC PERMEABILITY
摘要 PROBLEM TO BE SOLVED: To provide a non-planar sputtering target for magnetron cathode sputtering of magnetic thin film, capable of eliminating waste of expensive ferromagnetic material, reducing the frequency of replacement of target, and causing no deposition of foreign particles, by reducing the magnetic permeability of at least part of the ferromagnetic material to a value lower than the intrinsic magnetic permeability of the material. SOLUTION: The reduction in magnetic permeability can be attained by bending the ferromagnetic material in the part of targets 10 and 100 where most of sputtering occurs. By the reduction in magnetic permeability, considerable increases in leakage flux 26 and 126 at the target surface 38 and 138 are brought about and argon pressure reduction necessary to obtain stable plasma takes place. The reduction in magnetic permeability makes possible the increase of target thickness, which results in the prolongation of target life and reduction in the frequency of target replacement. Because of the absence of machining and target gap, waste of material can be eliminated and deposition of foreign particles can be prevented.
申请公布号 JP2001115258(A) 申请公布日期 2001.04.24
申请号 JP20000247144 申请日期 2000.08.17
申请人 PRAXAIR ST TECHNOL INC 发明人 XIONG WEI;MCDONALD PETER;HOO HUNG-LEE
分类号 C23C14/34;C23C14/35;G11B5/851;H01F10/16;H01F41/18;(IPC1-7):C23C14/34 主分类号 C23C14/34
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