| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon semiconductor system deposited with an electroless nickel plating film with high uniformity and tight adhesion. SOLUTION: A silicon wafer is dipped into a pretreating solution containing hydrofluoric acid and an oxidizer, is subjected to surface activation, is water- washed and is immediately applied with electroless nickel plating. As the oxidizer, a ternary solution using hydrogen peroxide aqueous solution and nitric acid, and in which, as a third solution, phosphoric acid, water or acetic acid is added is prepared.
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