发明名称 Method of in-situ cleaning for LPCVD teos pump
摘要 In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
申请公布号 US6221164(B1) 申请公布日期 2001.04.24
申请号 US20000491213 申请日期 2000.01.25
申请人 ADVANCED MICRO DEVICES, INC. 发明人 GOLOGHLAN FUODOOR;CHI DAVID;CHANG KENT KUOHUA;SERRATO HECTOR
分类号 C23C16/44;(IPC1-7):C23C16/00;H01L21/31;H01L21/469 主分类号 C23C16/44
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