发明名称 |
Method of in-situ cleaning for LPCVD teos pump |
摘要 |
In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
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申请公布号 |
US6221164(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US20000491213 |
申请日期 |
2000.01.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GOLOGHLAN FUODOOR;CHI DAVID;CHANG KENT KUOHUA;SERRATO HECTOR |
分类号 |
C23C16/44;(IPC1-7):C23C16/00;H01L21/31;H01L21/469 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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