发明名称 Reduction of mechanical stress in shallow trench isolation process
摘要 A method of minimizing mechanical stress generated during the trench-forming/trench-filling process steps in a standard shallow trench isolation (STI) process is provided. This is achieved by forming trenches with a more sloped and smoother profile, and/or limiting the trench depth to be less than 0.4 mum, and/or reducing or increasing the trench densification temperature, and/or performing the densification step after the chemical-mechanical polishing step. In addition, a furnace TEOS oxide film is used as the trench-filling material.
申请公布号 US6221733(B1) 申请公布日期 2001.04.24
申请号 US19980192096 申请日期 1998.11.13
申请人 LATTICE SEMICONDUCTOR CORPORATION 发明人 LI XIAO-YU;MEHTA SUNIL D.;TU ROBERT H.
分类号 H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/762
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