发明名称 |
Reduction of mechanical stress in shallow trench isolation process |
摘要 |
A method of minimizing mechanical stress generated during the trench-forming/trench-filling process steps in a standard shallow trench isolation (STI) process is provided. This is achieved by forming trenches with a more sloped and smoother profile, and/or limiting the trench depth to be less than 0.4 mum, and/or reducing or increasing the trench densification temperature, and/or performing the densification step after the chemical-mechanical polishing step. In addition, a furnace TEOS oxide film is used as the trench-filling material.
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申请公布号 |
US6221733(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
US19980192096 |
申请日期 |
1998.11.13 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
LI XIAO-YU;MEHTA SUNIL D.;TU ROBERT H. |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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