| 摘要 |
There is disclosed a method of manufacturing a heterojunction bipolar transistor. The method of manufacturing a heterojunction bipolar transistor can provide a high speed and high frequency characteristic of a transistor, which includes forming sequentially a buffer layer, a subcollector layer, a collector layer, a base layer, an emitter layer and a emitter cap layer on a semiconductor substrate; forming an emitter electrode a selected region of the emitter cap layer; performing etching process for forming a pattern by exposing the selected region of the base layer, and forming a polyimide layer on both side walls of the patternized emitter cap layer and the emitter layer; forming a base electrode at a selected region on the exposed base layer; performing etching process for forming a pattern by exposing some portions of the collector layer, and then forming a p-SiN film on both side walls of the patterned base layer and some portions of the collector layer; exposing some portions of the collector layer, etching the remaining collector layer and some portions of the subcollector layer with a inward slope, and then forming a collector electrode at a selected region of the remaining subcollector layer; and performing a thermal treatment process to make some of the patterned collector layer and the subcollector layer into an insulating region.
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