Method for reducing gate oxide damage caused by charging

摘要

A method of processing wafers containing a gate oxide assembly (10) is disclosed that reduces gate oxide damage during wafer production due to damage caused by charging. The method comprises creating an oxide gate assembly (10) on a silicon layer (11) in a production line chamber followed by the deposition of a polysilicon layer (22). Following the creation of the gate oxide assembly (10) a pressure of at least 1.2 Torr is maintained while lowering the power within the production line chamber. The invention can be used with a gate oxide layer (16) of less than 1000 angstroms.