发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To prevent erroneous write-in when noise is inputted to a write-enable signal. SOLUTION: Relating to DRAM timing generator 24 provided with a WS signal generating circuit 241 activating a write-state signal WS responding to activation of a write-enable signal/WE, a DE signal generating circuit 244 activating a write-driver-enable signal DE responding to activation of a WS signal, further, the device is provided with a driver reset circuit 242 activating a driver-reset signal/DRES1 responding to non-activation of a WE signal, and gives a signal/DRES1 to a NAND circuit 24431 after a flip-flop circuit 2441 in the DE signal generating circuit 244.
申请公布号 JP2001110182(A) 申请公布日期 2001.04.20
申请号 JP19990284624 申请日期 1999.10.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUKIKAWA YASUHIKO
分类号 G11C11/401;G11C7/10;G11C11/4093;(IPC1-7):G11C11/401 主分类号 G11C11/401
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