| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of operating with high efficiency and high power by producing an element having a stable distribution of electron concentration in a wide range (depth) of a channel layer. SOLUTION: On a buffer layer 23, an n-type InGaAs channel layer 24 having a large electron affinity and high impurity concentration, an InGaAs channel layer 25 having a large electron affinity and low impurity concentration, an n-type AlGaAs barrier layer (electron feeding layer) 26 having a small electron affinity and high impurity concentration, and an n+-type GaAs contact layer 27, are stacked. A source electrode 29 and a drain electrode 30 are formed on the contact layer 27. The contact layer 27 is recess-etched to expose the barrier layer 26, on which a gate electrode 31 is formed.
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