发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To offer the manufacture of semiconductor elements, especially of solar cells, which can form desired electrode patterns by simple processes at a low cost. SOLUTION: An electrode pattern is formed by such method that, after p-type semiconductor layers 3 and 4 are formed on a silicon substrate 1 and an n-type semiconductor layer 5 is formed on the p-type semiconductor layer, the n-type semiconductor layer is removed with a predetermined pattern by using laser abrasion so as to expose the p-type semiconductor layer.</p>
申请公布号 JP2001111080(A) 申请公布日期 2001.04.20
申请号 JP19990292885 申请日期 1999.10.14
申请人 SONY CORP 发明人 MATSUSHITA TAKESHI;MIZUNO SHINICHI
分类号 H01L21/3205;H01L21/20;H01L21/28;H01L31/0224;H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L21/3205
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