发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an amplifier circuit with improved operating characteristics. SOLUTION: In this amplifier circuit, a load means is provided at the drain side of an amplifying MOSFET to the gate of which input voltage is applied so that an output signal can be obtained. Further, a first resistance means for decreasing voltage to be applied to the drain and source of the amplifying MOSFET is arranged in a serial configuration with the amplifying MOSFET.
申请公布号 JP2001111359(A) 申请公布日期 2001.04.20
申请号 JP19990284881 申请日期 1999.10.05
申请人 HITACHI LTD 发明人 SUZUKI KAZUHISA
分类号 H03F3/347;H03F3/345;(IPC1-7):H03F3/347 主分类号 H03F3/347
代理机构 代理人
主权项
地址