| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-excited oscillation semiconductor laser which can fairly increase an operating limit of a self-excited oscillation and maintain a self-excited oscillation operation up to high temperatures. SOLUTION: In a self-excited oscillation semiconductor laser having a mesa stripe, a thin film p-AlGaAs layer is inserted into the middle of the mesa stripe, and the same layer is selectively side-etched, thereby forming the mesa stripe as an intake shape. Thus, it is possible to realize conditions that 'a current injection width is narrower than an optical waveguide width' and to fairly increase an operating limit of a self-excited oscillation.
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