| 摘要 |
PROBLEM TO BE SOLVED: To relax machining accuracy at the horizontal charge transfer electrode of a CCD solid state image sensor. SOLUTION: The solid state image sensor comprises a plurality of pixels 103, each comprising a photoelectric conversion element 103a and a transfer gate 103b for reading out charges therefrom, arranged in matrix on the surface of a semiconductor substrate 1, a plurality of vertical charge transfer paths 105 formed proximately to the pixel array including a plurality of pixels arranged in the vertical direction while projecting from the lower end thereof, a plurality of vertical charge transfer electrodes 115 formed on the specified regions thereof, a horizontal charge transfer path 107 arranged alternately with potential wells and potential barriers such that the vertical charge transfer path 105 is connected, at the lower end thereof, with the potential well and only one potential barrier is formed in the potential well connected with the vertical charge transfer path, and a multiplexing section T for transferring charges from the vertical charge transfer path 105 to the horizontal charge transfer path 107 while multiplexing.
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