| 摘要 |
PROBLEM TO BE SOLVED: To provide a reflectivity control type end face light emitting semiconductor element having a high wavelength detuning quantity at a light absorptive region from a light emission wavelength. SOLUTION: An Nd: YAG layer, e.g. irradiates an n-InP substrate 3 at an optical power of 12 W/cm-2 for about 30 min to cause crystals to be amorphous at the hetero-interface of a quantum well layer 13 due to the heat anneal effect, the condition of the crystals being amorphous changes the quantum level of this well layer 13 to shift the PL peak wavelength to a short wavelength, resulting in that the PL peak wavelength at the beam center is approximately 1290 nm and the PL peak wavelength at a light absorptive region B apart from the beam center by 1 mm is approximately 1460 nm. Thus, the wavelength detuning quantity at the light absorptive region B from the emission wavelength is approximately 170 nm. |
