| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of times of switching gate voltage by decreasing the number of required thresholds, to eliminate the need for pre-charge technology in operation reading multi-level data from a non-volatile memory, and to reduce transient difficulty of design of a non-volatile semiconductor storage device using a multi-level technology. SOLUTION: This memory is provided with first and second gate electrodes arranged on a channel region between diffused layers forming a source and a drain of a transistor, first and second channel sections opposing to these electrodes, when one value is read from a non-volatile memory in which a threshold is written in each of the first and the second channel sections, after thresholds written in the first and the second channel sections are discriminated, combination of the discriminated thresholds of the first and the second channel sections is outputted as one value. |
