PATTERN FORMING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method in which the cracking and peeling of a photosensitive material are not caused in a process even when a minute pattern of <=0.2 μm is formed. SOLUTION: In a step for forming a minute pattern 106 on a substrate 101, a photosensitive material 102 having etching resistance, <=1/ μm absorption coefficient to radiation 104 of 200-10 nm wavelength and <=15 MPa/μm residual stress in its film is used. The value K calculated by the expression K=(total number of atoms)/[(number of carbon atoms)-(number of oxygen atoms)] using the total number of atoms contained in the photosensitive material and the numbers of carbon atoms and oxygen atoms in the material is adjusted to <=3.3. The physical damage of the photosensitive material in the above step is prevented and the yield of a semiconductor device is enhanced.