发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device can be manufactured inexpensively with high mass-productivity. SOLUTION: In a method for manufacturing a semiconductor pellet 5, constituting a semiconductor element and having a GaAs substrate 1, a plurality of semiconductor elements 10 is formed with prescribed intervals on the substrate 1, and the substrate 1 carrying the elements 10 is worked to a prescribed thickness. In addition, an aluminum nitride plate 2, having nearby flat upper surface and grooves formed on the lower surface of the plate 2 at the same intervals as those of the elements 10, is prepared. The substrate 1 and aluminum nitride plate 2 are stuck to each other, and the stuck substrate 1 and aluminum nitride plate 2 are broken into pieces along the grooves 20 formed with the prescribed intervals on the rear surface of the plate 2.
申请公布号 JP2001110753(A) 申请公布日期 2001.04.20
申请号 JP19990283072 申请日期 1999.10.04
申请人 NEC CORP 发明人 TAKEUCHI TOSHIHARU
分类号 H01L21/301;H01L21/78;H01L31/0328;(IPC1-7):H01L21/301 主分类号 H01L21/301
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