发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a device pattern is formed as designed, across the whole area of a semiconductor substrate to improve the manufacturing yield. SOLUTION: In a method of manufacturing a semiconductor device, including the steps of forming a photoresist pattern 2 on a semiconductor thin film formed on a substrate 1, etching the substrate 1 other than the substrate 1 covered with a photoresist pattern 2 by using a wet etching liquid to form a plurality of semiconductor device patterns 3, and dicing the device patterns 3 to form semiconductor devices 4, the photoresist pattern 2 is formed as designed in the central portion of the substrate 1, and is enlarged gradually in the direction starting from the central portion toward to the periphery.
申请公布号 JP2001110774(A) 申请公布日期 2001.04.20
申请号 JP19990287916 申请日期 1999.10.08
申请人 VICTOR CO OF JAPAN LTD 发明人 AKAGI KANEYUKI
分类号 H01L21/306;H01L21/301;(IPC1-7):H01L21/306 主分类号 H01L21/306
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