| 摘要 |
PROBLEM TO BE SOLVED: To obtain a two-dimensional image detector comprising a photoconductive semiconductor layer formed on an active matrix substrate of roof-type structure in which the reliability is enhanced by protecting an insulation layer exposed on the periphery of a pixel region against deterioration. SOLUTION: An active matrix substrate 1 comprises a gate insulation film 5 provided on a glass substrate 4 on which a gate electrode and a storage capacitor electrode (Cs electrode) are formed, first and second insulation protective films 6, 7 formed sequentially on the gate insulation film 5, and a plurality of pixel electrodes 8 formed in matrix on the second insulation protective film 7. The second insulation protective film 7 composed of acryl resin is completely covered, at the end part thereof, with a photoconductive film 2. |
