| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation structure for a ferroelectrics on the main surface or inside of a silicon substrate, etc. SOLUTION: A lower part electrode, ferroelectrics film, upper part electrode, conductive reaction preventive film, and wiring electrode are sequentially laminated in this order. As a ferroelectrics film, PbTiO3, PZT (PbTi3, PbZrO3) or PLZT (La, PbTiO3, PbZrO3) are used generally. The conductive reaction preventive film is, for example, a high melting-point metal film such as Mo film, W film, and Ti film, a high melting-point metal silicide film such as MoSi film and TiSi film, a conductive metal nitride film such as TiN film, a conductive metal oxide film such as RuO2 film and ReO2 film, a conductive metal nitride/oxide film such as TiON film, and a composite film which comprises them. |
