| 摘要 |
PROBLEM TO BE SOLVED: To connect a part of a gate electrode wiring material with a part of a source/drain region with a joint of low resistance. SOLUTION: A gate insulating film, a gate electrode wiring material, a source/drain region, and a side wall are successively formed on the surface of a first conductivity-type semiconductor substrate, a side wall of the gate electrode wiring material of a second transistor formed on the source/drain region of a first transistor is removed using a resist pattern as a mask, and then a salicide is formed. A part of the gate electrode wiring material can be connected to a part of the source/drain with a joint of low resistance. |
