SEMICONDUCTOR MEMORY ELEMENT COMPRISING CAPACITOR PROTECTIVE FILM AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory element comprising a capacitor protective film and a low-resistance contact material film which prevent degradation of a capacitor dielectric film due to impurity diffusion. SOLUTION: The entire surface of a capacitor contained in a semiconductor memory element is covered with an encapsulating layer comprising multiple films. The encapsulating layer comprises at least a blocking layer and a capacitor protection layer made from different materials. The semiconductor memory element may comprise a hydrogen infiltration preventive film which is another capacitor protective film between a passivation film and a capacitor.