| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protective circuit made of a protective diode for removing static electricity flowed from the outside by discharge even though the protective diode is difficult to use while a high-frequency semiconductor device is kept good in its performance. SOLUTION: Each diode with a cathode connected to an input terminal is provided between a positive power terminal and the input terminal of a high-frequency semiconductor device and between a negative power terminal and the input terminal of the high-frequency semiconductor device. By using the electrostatic preventive circuit, a decrease in characteristics of the high-frequency element is prevented, and ESD breakdown withstanding strength at positive and negative poles can be improved. At least, one diode is required in connection, and a voltage, at which a current begins to flow in the electrostatic protective circuit can be set by joining a plurality of diodes in series Then, each desired voltage can be set by adjusting the number of diodes even when absolute values of positive and negative power voltage are different.
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