| 摘要 |
PROBLEM TO BE SOLVED: To provide an atmospheric pressure phase growing apparatus for forming a thin film, whose thickness is uniform which can be suitably applied to a semiconductor device by suppressing pressure changes in this device. SOLUTION: This apparatus is provided with a by-pass passage for linking the upper part and lower part of the elevating mechanism part of a tray, so that compression or expansion accompanying the elevation of the tray is relaxed, and that pressure changes generated inside can be suppressed. Thus, film-forming precision can be further improved, and the film formation of a film whose thickness is uniform can be attached.
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